silicon planar epitaxial npn transistor semelab limited SMLBFY90 ? low noise transistor ? for use in broad and narrow-band amplifiers up to 1ghz semelab limited reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 7861 issue 2 semelab limited coventry road, lutterworth, leicestershire, le17 4jb, uk. telephone: +44 (0) 1455 556565 fax +44 (0) 1455 552612 e-mail: sales@semelab.co.uk website: http://www .semelab.co.uk a subsidiary of tt electronics plc. semelab v cbo collector - base voltage v cer collector - emitter voltage (r be 50 ) v ceo collector - emitter voltage v ebo emitter - base voltage i c(av) average collector current i cm peak collector current (f 1mhz) p tot power dissipation at t a = 25c t stg storage temperature t j junction temperature 30v 30v 15v 2.5v 25ma 50ma 200mw 200c -65 to +200c absolute maximum ratings ( t a = 25c unless otherwise stated ) thermal properties parameters min. typ. max. unit r ja junction - ambient thermal resistance 880 c/w r jc junction - case thermal resistance 580 c/w * pulse test t p = 300s, ? 2% ( 1) shield lead (case) not connected (2) shield lead (case) grounded
silicon planar epitaxial npn transistor semelab limited document number 7861 issue 2 semelab limited coventry road, lutterworth, leicestershire, le17 4jb, uk. telephone: +44 (0) 1455 556565 fax +44 (0) 1455 552612 e-mail: sales@semelab.co.uk website: http://www .semelab.co.uk SMLBFY90 electrical characteristics ( t a = 25c unless otherwise stated) parameters test conditions min. typ. max. unit. i cbo collector cut off current v cb = 15v i e = 0 10 na v (br)ceo* collector emitter breakdown voltage i c = 10ma i b = 0 15 v v (br)cer* collector emitter breakdown voltage i c = 10ma r be 50 30 h 21e static forward current transfer ratio v ce = 1v i c = 2ma 25 150 - v ce = 1v i c = 25ma 20 125 dynamic characteristics parameters test conditions min. typ. max. unit. f t transition frequency v ce = 5v i c = 2ma f = 100mhz 0.6 ghz v ce = 5v i c = 25ma f = 100mhz 1.0 c 22b (1) output capacitance v cb = 10v i e = 0 f = 1mhz 1.5 pf c 12e (2) open circuit reverse transfer capacitance v ce = 5v i c = 0 f = 1mhz 0.8 pf is 21 i 2 insertion gain v ce = 10v i c = 14ma f = 200mhz 10.0 db 0.48 (0.019) 0.41 (0.016) dia. 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. 1 2 3 4 2.54 (0.100) nom. mechanical data dimensions in mm (inches) to72 (to-206af) pin 1 - emitter pin 3 - collector pin 2 - base pin 4 - connected to case
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